2N3904 Datasheet, PDF (3/4 Pages) NXP Semiconductors – NPN switching transistor

2N3904
ELECTRICAL CHARACTERISTICS CURVE
300
250
T_J = 150 ˚C
V_CE = 1V
200
T_J = 100 ˚C
150
T_J = 25 ˚C
100
50
0
0.01
0.1
1
10
100
Collector Current, I_C (mA)
1000
Fig. 1. Typical h_FE vs Collector Current
1.400
1.200
1.000
0.800
0.600
T_J = 25 ˚C
T_J = 100 ˚C
0.400
0.200
T_J = 150
V_CE = 1V
0.000
0.01
0.1
1
10
100
Collector Current, I_C (mA)
1000
Fig. 2. Typical V_BE vs Collector Current
1.000
I_C/I_B = 10
0.100
T_J = 150 ˚C
T_J = 25 ˚C
1.0
T_J = 25 ˚C
T_J = 100 ˚C
T_J = 150 ˚C
I_C/I_B = 10
0.010
0.01
0.1
1
10
100
Collector Current, I_C (mA)
1000
Fig. 3. Typical V_CE (sat) vs Collector Current
0.1
0.01
0.1
1
10
100
Collector Current, I_C (mA)
Fig. 4. Typical V_BE (sat) vs Collector Current
10
C_IB (EB)
T_J = 25 ˚C
C_OB (CB)
STAD-SEP.13.2005
1
0.1
1
10
100
Reverse Voltage, V_R (V)
Fig. 5. Typical Capacitances vs Reverse Voltage
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