2N3904 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor

2N3904
ELECTRICAL CHARACTERISTICS (T_J=25^OC, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Current-Gain - Bandwidth Product
Collector-Base Capacitance
Emitter - Base Capacitance
D e la y Ti me
Ri s e Ti me
S to ra g e Ti me
F a ll Ti me
S ym b o l
Te s t C o nd i ti o n
V _{(B R )}C E O I_C =1 .0 mA , I_B =0
V _{(B R )}C B O I_C=1 0 uA , I_E =0
V _{(B R )}E B O I_E=1 0 uA , I_C =0
I_{B E V}
V_CE=30V, V_EB=3.0V
I_{C E X}
V_CE=30V, V_EB=3.0V
h_{F E}
V
C E (S AT)
V_{B E (S AT)}
f_T
C_CBO
I_C =0.1mA , V _{C E} =1.0V
I_C =1.0mA , V _{C E} =1.0V
I_C =10mA , V _{C E} =1.0V
I_C=50mA , V _{C E} =1.0V
I_C=100mA , V _CE=1.0V
I_C=10mA , I_B=1.0mA
I_C=50mA , I_B=5.0mA
I_C=10mA , I_B=1.0mA
I_C=50mA , I_B=5.0mA
I_C=10mA , V _CE=20V
f=100MH_Z
V _{C B} =5.0V, I_E =0, f=1MH_Z
C_EBO
V _CB=0.5V, I_E =0, f=1MH_Z
t_d
V =3V, V =0.5V,
CC
BE
t_r
I_C=10mA , I_B1=1mA
t_s
V _CC=3V,I_C=10mA
t_f
I_B1=I_B2=1 mA
MIN.
40
60
6.0
-
-
40
70
100
60
30
-
-
0.65
-
300
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
50
50
-
-
300
-
-
0.2
0.3
0.85
0.95
-
4.0
8
35
35
200
50
Uni ts
V
V
V
nA
nA
-
V
V
MH_Z
P^F
P^F
ns
ns
ns
ns
STAD-SEP.13.2005
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
+ 1 0.9 V
0
-0 .5V
300ns
D u ty C y c le ~ 2 .0 %
< 1ns
10K Ω
275Ω
C _S* < 4pF
D e la y a n d R is e T im e E q u iv a le n t T e s t C irc u it
+3V
+ 1 0 .9 V
0
-9.1V
10 to 500us
Duty Cycle ~ 2.0%
< 1ns
10KΩ
1N916
275Ω
C_S* < 4pF
Storage and Fall T im e Equivalent T est C ircuit
PAGE . 2