MMDT4403TB6 Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT4403TB6
ELECTRICAL CHARACTERISTICS
Parameter
Collector - E mitter Breakdown
Voltage
Collector - Base Breakdown
Voltage
Emitter - B ase Breakdown Voltage
S ym b o l
Te st C o nd i ti o n
V(BR)C E O IC =-1.0mA, IB =0
V(BR)C B O IC =-100uA, IE =0
V (BR)E BO IE= -100uA, IC =0
Base C utoff Current
IBL
VCE=-35V, VEB=-0.4V
Collector Cutoff Current
DC C urrent Gain (Note 2)
Collector - E mitter Saturation
Voltage (Note 2)
Base - Emitter Saturation Voltage
(Note 2)
Collector - Base Capacitance
ICEX V C E=-35V, V EB =-0.4V
h_FE
V CE(SAT)
V BE(SAT)
IC =-0.1mA, V C E =-1.0V
IC =-1.0mA, V C E =-1.0V
IC =-10mA , V CE =-1.0V
IC =-150mA, V C E =-2.0V
IC =-500mA, V C E =-2.0V
IC =-150mA, IB=-15mA
IC =-500mA, IB=-50mA
IC =-150mA, IB=-15mA
IC =-500mA, IB=-50mA
CCBO VCB=-5V, IE=0, f=1MHz
Emitter - B ase Capacitance
Current Gain - Bandwidth Product
D e lay Ti me
Rise Time
S to ra ge Ti me
Fall Time
CEBO
FT
td
tr
ts
tf
VCB=-0.5V, IC=0, f= 1MHz
VCE=-10V, IC=-20mA,
f=100MHz
V C C =-3 0 V,V B E =-2 .0 V,
IC =-150mA,IB1=-15mA
V C C =-3 0 V,V B E =-2 .0 V,
IC =-150mA,IB1=-15mA
V C C = -3 0 V,IC = -1 5 0 mA
IB 1 = IB 2 = - 1 5 m A
V C C = -3 0 V,IC = -1 5 0 mA
IB 1 = IB 2 = - 1 5 m A
MIN.
-40
-40
-5.0
-
-
30
60
100
90
20
-
0.75
-
-
-
200
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-100
-100
-
-
-
300
-
-0.40
-0.75
-0.95
-1.30
6.5
30
-
15
20
225
30
Uni ts
V
V
V
nA
nA
-
V
V
pF
pF
MHz
ns
ns
ns
ns
REV.0.1-JUN.29.2009
PAGE . 2