MMDT4403TB6 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT4403TB6
DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40 Volts ^POWER 200 mWatts
SOT-563
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage V_CE = -40V
• Collector current I_C = -500mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-563, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.003 gram
• Marking: TZ
654
ABSOLUTE RATINGS
Collector - E mitter Voltage
Parameter
Collector - B ase Voltage
Emitter - B ase Voltage
Collector Current - C ontinuous
THERMAL CHARACTERISTICS
12 3
Fig.53
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Value
-40
-40
-5.0
-500
Units
V
V
V
mA
Symbol
PTOT
RJA
TJ
TSTG
Value
200
625
-55 to 150
-55 to 150
Units
mW
O_C/W
O_C
O_C
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.1-JUN.29.2009
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