MMDT3906TB6 Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT3906TB6
ELECTRICAL CHARACTERISTICS
PARAMETER
S ym b o l
Te s t C o nd i ti o n
MIN.
Collector - Emitter Breakdown Voltage
V _{(B R )C E O} I_C=-1 .0 mA , I_B =0
-40
Collector - Base Breakdown Voltage
V _{(B R )C B O} I_C=-1 0 uA , I_E =0
-40
Emitter - Base Breakdown Voltage
V _{(B R )E B O} I_E=-1 0 uA , I_C =0
-5.0
Base Cutoff Current
I_{B l}
V_CE=-30V, V_EB=-3.0V
-
Collector Cutoff Current
DC Current Gain (Note 2)
Collector - Emitter Saturation Voltage
(Note 2)
Base - Emitter Saturation Voltage
(Note 2)
Collector - Base Capacitance
I_{C E X}
V_CE=-30V, V_EB=-3.0V
h_{F E}
V_{C E (S AT)}
V_{B E (S AT)}
C_CBO
I =-0.1mA, V =-1.0V
C
CE
I_C=-1.0mA , V _CE=-1.0V
I_C=-10mA , V _CE=-1.0V
I_C=-50mA , V _CE=-1.0V
I_C=-100mA , V _CE=-1.0V
I_C=-10mA , I_B=-1.0mA
I_C=-50mA , I_B=-5.0mA
I_C=-10mA , I_B=-1.0mA
I_C=-50mA , I_B=-5.0mA
V _CB=-5V, I_E =0, f=1MHz
-
60
80
100
60
30
-
-0.65
-
-
Emitter - Base Capacitance
D e la y Ti me
Ri s e Ti me
S to ra g e Ti me
F a ll Ti me
C_EBO
V _CB=-0.5V, I_C =0, f=1MHz
-
td
V_CC=-3V,V_BE=-0.5V,
I_C=-10mA ,I_B=-1.0mA
-
tr
V_CC=-3V,V_BE=-0.5V,
I_C=-10mA ,I_B=-1.0mA
-
ts
V _CC=-3 V,I_C=-10 mA
I_B 1 = I_B 2 = - 1 . 0 m A
-
tf
V _CC=-3 V,I_C=-10 mA
I_B 1=I_B 2=1.0mA
-
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
TYP.
-
MAX. Units
-
V
-
-
V
-
-
V
-
-50
nA
-
-50
nA
-
-
-
-
-
300
-
-
-
-
-
-
-0.25
-0.4
V
-
-
-0.85
-0.95
V
-
4.0
pF
-
10
pF
-
35
ns
-
35
ns
-
225
ns
-
75
ns
-0 .5 V
0
300ns
< 1ns
-10.9V
10K W
275 W
CS* < 4pF
D elay an d R ise Tim e E q u iv alen t Test C ircu it
+3V
REV.0.0-FEB.6.2009
0
10 to 500us
Duty Cycle ~ 2.0%
< 1ns
+9 .1V
- 10.9V
10K W
1N916
275 W
CS* < 4pF
Storage and Fall Tim e Equivalent Test Circuit
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