MMDT3906TB6 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT3906TB6
DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40 Volts ^{POWER 200 mWatts}
SOT-563
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage V_CE = -40V
• Collector current I_C = -200mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-563, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.003gram
• Marking: TS
654
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
12 3
Fig.53
THERMAL CHARACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
REV.0.0-FEB.6.2009
Symbol
VCEO
VCBO
VEBO
IC
Symbol
P_TOT
R_θJA
T_J
T_STG
Value
-40
-40
-5.0
-200
Value
200
625
-55 to 150
-55 to 150
Units
V
V
V
mA
Units
mW
O_C/W
O_C
O_C
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