MMDT3904TB6 Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT3904TB6
ELECTRICAL CHARACTERISTICS
Parameter
S ym b o l
Te s t C o nd i ti o n
Mi n.
Collector - Emitter Breakdown Voltage
V _(BR)CEO
I _C=1.0mA, I _B=0
40
Collector - Base Breakdown Voltage
V _(BR)CBO
I _C=10uA, I _E=0
60
Emitter - Base Breakdown Voltage
V _(BR)EBO
I _E=10uA, I _C=0
6.0
Base Cutoff Current
I _Bl
V_CE=30V, V_EB=3.0V
-
Collector Cutoff Current
DC Current Gain (Note 2)
Collector - Emitter Saturation Voltage
(Note 2)
Base - Emitter Saturation Voltage
(Note 2)
Collector - Base Capacitance
I _CEX
h_FE
V _CE(SAT)
V _BE(SAT)
C _CBO
V_CE=30V, V_EB=3.0V
I _C=0.1mA, V_CE=1.0V
I _C=1.0mA, V_CE=1.0V
I _C=10mA, V_CE=1.0V
I =50mA, V =1.0V
C
CE
I _C=100mA, V_CE=1.0V
I _C=10mA, I _B=1.0mA
I _C=50mA, I _B=5.0mA
I _C=10mA, I _B=1.0mA
I =50mA, I =5.0mA
C
B
V_CB=5V, I _E=0, f=1MHz
-
40
70
100
60
30
-
0.65
-
-
Emitter - Base Capacitance
C _EBO
V_CB=0.5V, I _C=0, f=1MHz
-
D e la y Ti me
Ri s e Ti me
S to ra g e Ti me
F a ll Ti me
td
V_CC=3V,V_BE=-0.5V,
I _C=10mA,I _B=1.0mA
-
tr
V_CC=3V,V_BE=-0.5V,
I _C=10mA,I _B=1.0mA
-
ts
V_CC=3V,I _C=10mA
I _B1=I _B2=1.0mA
-
tf
V_CC=3V,I _C=10mA
I _B1=I _B2=1.0mA
-
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
Typ .
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
Uni ts
V
-
V
-
V
50
nA
50
nA
-
-
300
-
-
-
0.2
0.3
V
0.85
0.95
V
4.0
pF
8.0
pF
35
ns
35
ns
200
ns
50
ns
+10.9V
0
-0 .5 V
300ns
D uty C ycle ~ 2.0%
< 1ns
10K W
275 W
CS* < 4pF
D elay and R ise Tim e Equivalent Test C ircuit
+3V
+10.9V
0
-9 .1 V
10 to 500us
Duty Cycle ~ 2.0%
< 1ns
10K W
1N916
275 W
CS* < 4pF
STAD-MAR.13.2008
Storage and Fall Tim e Equivalent Test Circuit
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