MMDT3904TB6 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT3904TB6
DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE ^{40 Volts POWER 225 mWatts}
SOT-563
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 200mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-563, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.003 gram
• Marking: TX
ABSOLUTE RATINGS
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Parameter
THERMAL CHARACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Symbol
P_TOT
R_θJA
T_J
T_STG
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-MAR.13.2008
Value
40
60
6.0
200
Value
225
625
-55 to 150
-55 to 150
Units
V
V
V
mA
Units
mW
O_C/W
O_C
O_C
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