MMBTH10_06 Datasheet, PDF (2/5 Pages) Pan Jit International Inc. – VHF/UHF NPN SILICON TRANSISTOR

MMBTH10
ELECTRICAL CHARACTERISTICS (TA=25^OC , unless otherwise noted)
C HA RA C TE RIS TIC
OF F C HA RA C TE RIS TIC S
Collector-Emitter Breakdown Voltage
(IC=1 .0 mA d c, IB=0 )
Collector-Base Breakdown Voltage
(IC=1 0 0 µA d c, IE=0 )
Emitter-Base Breakdown Voltage
(IE=1 0 µA d c, IC=0 )
Collector Cutoff Current
(V CB=2 5 V d c, IE=0 )
Emitter Cutoff Current
(V EB=2 .0 V d c, IC=0 )
ON C HA RA C TE RIS TIC S
D C C urre nt Ga i n (IC=4.0 mA d c, V CE=10 V d c)
Collector-Emitter Saturation Voltage
(IC=4 .0 mA d c, IB=0 .4 mA d c)
Base-Emitter On Voltage
(IC=4 .0 mA d c, V CE=1 0 V d c)
S MA LL-S IGNA L C HA RA C TE RIS TIC S
Current-Gain-Bandwidth Product
(IC=4 .0 mA d c, V CE=1 0 V d c, f=1 0 0 MHz )
Collector-Base Capacitance
(V CB=10 V d c, IE=0 , f=1.0 MHz )
Common-Base Feedback Capacitance
(V CB=1 0 V d C, IE=0 , f=1 .0 MHz )
C o lle c to r-B a s e Ti me C o ns ta nt
(IC=4 .0 mA d c, V CB=1 0 V d c, f=3 1 .8 MHz )
S YMB OL
MIN
TYP
MAX
UNIT
V (BR)CEO
25
V (BR)CBO
30
V (BR)EBO
3.0
IC B O
-
IE B O
-
-
-
Vdc
-
-
Vdc
-
-
Vdc
-
100
nA d c
-
100
nA d c
hF E
60
VCE(sat)
-
VBE
-
-
-
-
-
0.5
Vdc
-
0.95
Vdc
fT
Ccb
Crb
rb'CC
650
-
-
MHz
-
-
0.7
pF
-
-
0.65
pF
-
-
9.0
ps
STAD-JUN.30.2006
PAGE . 2