MMBTH10_06 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – VHF/UHF NPN SILICON TRANSISTOR

MMBTH10
VHF/UHF NPN SILICON TRANSISTOR
VOLTAGE 25 Volts
POWER 225 mW
FEATURES
• NPN Silicon
• In compliance with EU RoHS 2002/95/EC directives
SOT- 23
.119(3.00)
.110(2.80)
Unit: inch (mm)
MECHANICAL DATA
Case : SOT-23, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx weight : 0.008 gram
.083(2.10)
.066(1.70)
.006(.15)MAX
.020(.50)
.013(.35)
.006(.15)
.002(.05)
MAXIMUM RATINGS
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
S YMB OL
VCEO
VCBO
VEBO
VALUE
25
30
3.0
UNIT
Vdc
Vdc
Vdc
THERMAL CHARACTERISTICS
C HA RA C TE RIS TIC
To ta l D e vi c e D i s s i p a ti o n F R-5 B o a rd ( No te 1 )
TA = 2 5 ^OC
Derate above 25^OC
Thermal Resistance Junction to Ambient
(Note 1)
To ta l D e vi c e D i s s i p a ti o n A lum i na S ub s tra te
(Note 2) TA=25^OC
Derate above 25^OC
Thermal Resistance Junction to Ambient
(Note 2)
J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
S YMB OL
PD
RΘJA
PD
RΘJA
TJ,TSTG
MAX.
225
1.8
556
UNITS
mW
mW/^OC
O_{C /W}
300
2.4
417
-55 to +150
mW
mW/^OC
O_{C /W}
O_C
Note 1. FR-5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
STAD-JUN.30.2006
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