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MMBT4403_09 Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – PNP GENERAL PURPOSE SWITCHING TRANSISTOR
MMBT4403
ELECTRICAL CHARACTERISTICS (TJ = 25˚C, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Current-Gain – Bandwidth Product
Collector - Base Capacitance
Emitter - Base Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
SYMBOL
Test Condition
V(BR)CEO IC=-1.0mA, IB=0
V(BR)CBO IC=-100uA, IE=0
V(BR)EBO IE=-100uA, IC=0
IBEV VCE=-35V, VEB=-0.4V
ICEX VCE=-35V, VEB=-0.4V
IC=-0.1mA, VCE=-1.0V
IC=-1.0mA, VCE=-1.0V
hFE IC=-10mA, VCE=-1.0V
IC=-150mA, VCE=-2.0V
IC=-500mA, VCE=-2.0V
IC=-150mA, IB=-15 mA
VCE(SAT)
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
VBE(SAT)
IC=-500mA, IB=-50mA
IC=-20mA, VCE=-10V,
fT
f=100MHz
CCBO
CEBO
VCB=-5.0V, IE=0, f=1MHz
VCB=-0.5V, IC=0, f=1MHz
td VCC=-30V, VBE=-2.0V,
tr IC=-150mA, IB1=-15mA
ts VCC=-30V, IC=-150mA,
tf
IB1=IB2=15mA
MIN. TYP. MAX. UNIT
-40
-
-
V
-40
-
-
V
-5.0 -
-
V
-
- -100 nA
-
- -100 nA
30
-
-
60
-
-
100 -
-
-
100 - 300
20
-
-
-
- -0.4
V
-
- -0.75
-0.75 - -0.95
V
-
- -1.3
200 -
- MHz
-
-
8.5 pF
-
-
30 pF
-
-
15 ns
-
-
20 ns
-
- 225 ns
-
-
30 ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
-30V
-30V
+2V
0
< 2ns
1.0KΩ
10 to 100ns
-16V
1N916
Duty Cycle ~ 2.0%
Fig. 1. Turn-On Time
200Ω
CS < 10pF
0
<20ns
+14V
1.0KΩ
200Ω
CS < 10pF
1 to 100us
Duty Cycle = 2.0%
-16V
Fig. 2.
1N916
+4V
Turn-Off Time
REV.0.1-MAR.5.2009
PAGE . 2