MMBT4403_09 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMBT4403
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40V
POWER 225mW
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage V_CE = -40V
Collector current I_C =-600mA
Complimentary (NPN) device: MMBT4401
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-750, Method 2026
Approx Weight: 0.008 grams
Marking: M3A
Top View
3
Collector
1
BASE
3
COLLECTOR
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_TOT
T_J, T_STG
VALUE
-40
-40
-5.0
-600
225
-55 to 150
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
Thermal Resistance , Junction to Ambient (Note 1) RθJ A
556
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. using minimum recommended pad.
REV.0.1-MAR.5.2009
UNIT
V
V
V
mA
mW
℃
UNIT
℃/W
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