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| 2N7002_04 Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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ELECTRICAL CHRACTERISTICS
TA=25кUnless otherwise noted
PARAMETER
SYMBOL
CONDITION
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
BVDSS
IDSS
IGSSF
VGS=0V, ID=10Ó´A
VDS=60V, VGS=0V, TJ=25к
VDS=60V, VGS=0V, TJ=125к
VDS=0, VGS=20V
Gate-Body Leakage, Reverse
IGSSR
VDS=0, VGS=-20V
ON CHARACTERISTIC(note1)
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250Ó´A
Static Drain-Source On-Resisitance
Drain-Source On-Voltage
On-State Drain Current
RDS(ON)
VDS(ON)
ID(ON)
VGS=10V, ID=500mA, TJ=25к
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=10V, VDSÐ2VDS(ON)
Forward Transconductance
GFS
VDSÐ2VDS(ON), ID=200mA
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V, VGS=0V, F=1.0MHz
Reverse Transfer Capacitance
CRSS
Turn-On Time
Turn-Off Time
TON
VDD=30V,RL=25Ó¨, ID=500mA
TOFF
VGS=10V, RGEN=25Ó¨
MIN
60
Ϋ
Ϋ
Ϋ
1
Ϋ
Ϋ
500
80
Ϋ
Ϋ
Ϋ
Ϋ
Ϋ
TYP MAX UNIT
105
Ϋ
V
Ϋ
1.0
Ó´A
0.5
mA
Ϋ
100
nA
Ϋ
-100
nA
2.1
2.5
V
3.7
7.5
Ó¨
Ϋ
3.75
1.5
V
Ϋ
Ϋ
mA
Ϋ
Ϋ
mS
Ϋ
50
pF
Ϋ
25
pF
Ϋ
5
pF
Ϋ
20
ns
Ϋ
20
ns
STAD-SEP.14.2004
PAGE . 2
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