2N7002_04 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DATA SHEET
2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VOLTAGE 60 Volts CURRENT 200 mAmp
FEATURE
N-channel enhancement mode field effect transistor,de-
signed for high speed pulse amplifier and drive applica-
tion,which is manufactured by the N-channel DMOS pr-
ocess.
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANICS DATA
High density cell design for low R_DS(ON)
Voltage controlled small signal switching.
Rugged and reliabale.
High saturation current capability.
High-speed switching.CMOS logic compatible.
CMOS logic compatible input.
Not thermal runaway.
No secondary breakdown.
Marking Code: S72
ABSOLUTE MAXIMUM RATING
TA=25кUnless otherwise noted
PARAMETER
Drain-Source Voltage
Drain-gate Voltage
Gate-Source Voltage
Maximum Drain Current-Continue
-Pulse ^(Note1)
Maximum power Dissipation Derating Above 25к
Operating and Storage Temperature Range
Thermal Risistance,Junction-to-Ambient
Note:
1.Pulse Test: Pulse Width <300 us, Duty Cycle <2.0%.
SOT-23
.119(3.00)
.110(2.80)
.083(2.10)
.066(1.70)
.006(.15) MAX.
.020(.50)
.013(.35)
D
3
1
2
G
S
SYMBOL
V_DSS
V _DRG
V_GSS
I_D
P_D
T_J,T_STG
RÓ°_JA
Value
60
60
20
200
800
350
-55 to +150
357
Unit: inch ( mm )
.006(.15)
.002(.05)
UNIT
V
V
V
mA
mW
к
к/W
STAD-SEP.14.2004
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