2N4401 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor

2N4401
ELECTRICAL CHARACTERISTICS (T_J=25^OC, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Current-Gain - Bandwidth Product
Collector-Base Capacitance
Emitter - Base Capacitance
D e la y Ti me
Ri s e Ti me
S to ra g e Ti me
F a ll Ti me
S ym b o l
Te s t C o nd i ti o n
V _(BR)C E O I_C=1 .0 mA , I_B=0
V _(BR)C B O I_C=1 0 0 uA , I_E=0
V _(BR)E B O I_E=1 0 0 uA , I_C=0
I_{B E V}
V_CE=35V, V_EB=0.4V
I_{C E X}
h_FE
V
C E (S AT)
V _BE(SAT)
f_T
C _CBO
V_CE=35V, V_EB=0.4V
I_C=0.1mA , V _CE=1.0V
I_C=1.0mA , V _CE=1.0V
I_C=10mA , V _CE=1.0V
I_C=150mA , V _CE=1.0V
I_C=500mA , V _CE=2.0V
I_C=150mA , I_B=15mA
I_C=500mA , I_B=50mA
I_C=150mA , I_B=15mA
I_C=500mA , I_B=50mA
I_C=200mA , V _CE=10V
f=100MH_Z
V _CB=5.0V, I_E=0, f=1MH_Z
C _EBO
V _CB=5.0V, I_E=0, f=1MH_Z
t_d
V =30V, V =2.0V,
CC
BE
t_r
I_C=150mA , I_B1=15mA
t_s
V _CC=30V,I_C=150mA
t_f
I_B1=I_B2=1 5 mA
MIN.
40
60
6.0
-
-
20
40
80
100
40
-
-
0.75
-
250
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SWITCHING TIME EQUIVALENT TEST CIRCUITS
MAX.
-
-
-
100
100
-
-
-
300
-
0.4
0.75
0.95
1.2
-
6.5
30
15
20
225
30
Uni ts
V
V
V
nA
nA
-
V
V
MH_Z
P^F
P^F
ns
ns
ns
ns
+30V
+30V
+16V
0
-2V
1.0 to 100us
Duty Cycle ~ 2.0%
1KΩ
< 2ns
200Ω
Fig. 1. Turn-On Time
+16V
1.0 to 100us
Duty Cycle ~ 2.0%
200Ω
0
C_S* < 10pF
-14V
Scope rise time < 4ns
< 20ns
1KΩ
1N914
-4V
* Total shunt capacitance of test jig, connectors, and oscilloscope
Fig. 2. Turn-Off Time
C_S* < 10pF
STAD-AUG.23.2005
PAGE . 2