2N4401 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistor

2N4401
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE ^{40 Volts}
POWER 625 mWatts
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage V_CE = 40V
• Collector current I_C = 600mA
• Complimentary (PNP) device:2N4403
• Pb free product are available :99% Sn above can meet RoHS
environment substance directive request
MECHANICAL DATA
Case: TO-92
Terminals: Solderable per MIL-STD-202, Method 208
Approx Weight : 0.02grams
Marking : 4401
1
2
3
2
BASE
3
COLLECTOR
1
EMITTER
TO-92
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
THERMAL CHARACTERISTICS
Max Power Dissipation
PARAMETER
Storage Temperature
Junction Temperature
Thermal Resistance, Junction to Ambient
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
40
60
6.0
600
Units
V
V
V
mA
Symbol
P_TOT
T_STG
T_J
R_θJA
Value
625
-55 to 150
-55 to 150
200
Units
mW
O_C
O_C
O_C/W
STAD-AUG.23.2005
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