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| 1SS397 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) | |||
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1SS397
ELECTRICAL CHARACTERISTICS TA=25OC
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
Test
Circuit
Test
Condition
VF
-
IF=10mA
-
IF=100mA
IR
-
VR=300V
-
VR=400V
CT
-
VR=0,f=1MHZ
Min
-
-
-
-
-
Reverse recovery time
trr
-
IF=10mA
-
Typ.
1.0
-
-
2.5
Max
0.9
1 .3
0.1
1.0
5.0
500
Unit
V
µA
pF
nS
Equivalent Circuit Fig.1 Reverse Recovery Time (trr) Test Circuit(Top View)
Marking
REV.0.1-OCT.13.2008
PAGE . 2
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