1SS397 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)

1SS397
HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS
VOLTAGE 420 Volts
CURRENT 100mA
SOT-323
FEATURES
• Fast switching speed.
• Surface mount package Ideally Suited for Automatic insertion
• Electrically Identical to Standard JEDEC
• High Conductance
• In compliance with EU RoHS 2002/95/EC directives
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
.056(1.40)
.047(1.20)
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
.004(.10)MAX.
Unit: inch (mm)
.006(.15)
.002(.05)
.016(.40)
.008(.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Marking Code
PARAMETER
Maximum (peak) reverse Voltage
Reverse Voltage
Maximum (peak) forward current
Average Forward current
Surge Current IFSM@tp=0.001ms
Power Dissipation
Junction and Storage Temperature Range
SYMBOL
V_RRM
VR
I_FM
IO
IFS M
PTOT
T_J,T_{S TG}
1SS397
B9
420
400
300
100
4
100
-55 t o +125
UNITS
V
V
mA
mA
A
mW
O_C
NOTE:
1. CJ at VR=0, f=1MHZ
2.From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω
REV.0.1-OCT.13.2008
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