XP0240100L Datasheet, PDF (2/4 Pages) Panasonic Battery Group – Silicon PNP epitaxial planar type

XP02401
This product complies with the RoHS Directive (EU 2002/95/EC).
P_T  T_a
I_C  V_CE
I_C  I_B
250
−60
−60
Ta = 25°C
VCE = −5 V
−50
IB = − 300 µA
Ta = 25°C
−50
200
150
100
/ ₅₀
e _{. 0}
e ₀
40
80
120
160
c _{tag Ambient temperature Ta (°C)}
−250 µA
−40
−200 µA
−30
−150 µA
−20
−100 µA
−10
−50 µA
0
0
−4
−8 −12 −16
Collector-emitter voltage V_CE (V)
−40
−30
−20
−10
0
0 −100 −200 −300 −400
Base current I_B (µA)
an ^edlifecycles _−400
n ^{u uct −350}
I_B  V_BE
V_CE = −5 V
T_a = 25°C
Prod −300
te ^{tin four −250}
ing _type ^{n. −200}
in ^{n llow ce atio −150}
es ^fo tenan ^{type typed form / −100}
a _{coed incluedd maintenancetinued type test} ^{in .jp/en −50}
u ^{n in on d t la .co 0}
M _is tin ^{la a c e u ic 0}
−0.4 −0.8 −1.2 −1.6
p ^m dis tinu ^{bo on Base-emitter voltage VBE (V)}
−240
−200
−160
I_C  V_BE
VCE = −5 V
25°C
Ta = 75°C −25°C
−120
−80
−40
0
0 −0.4 −0.8 −1.2 −1.6 −2.0
Base-emitter voltage V_BE (V)
−10
−1
−10^−1
V_CE(sat)  I_C
IC / IB = 10
25°C ^{Ta = 75°C}
−25°C
−10^−2
−10^−3
−1
−10
−10²
−10³
Collector current I_C (mA)
/Discon ^{planed discong URL an.panas hFE  IC}
e ^{in o 600}
ic _{VCE = –10 V}
D_{tenanc follow .sem 500}
in isit ^ww ₄₀₀
Ma e ^{v ://w Ta = 75°C}
as ttp _{300 25°C}
Ple ^h _{−25°C}
f_T  I_E
160
V_CB = −10 V
T_a = 25°C
140
120
100
80
60
C_ob  V_CB
8
f = 1 MHz
7
I_E = 0
T_a = 25°C
6
5
4
3
200
40
2
100
20
1
0
−1
−10
−10²
−10³
Collector current I_C (mA)
0
10^−1
1
10
10²
Emitter current I_E (mA)
0
−1
−10
−10²
Collector-base voltage V_CB (V)
2
SJJ00155BED