XP0240100L Datasheet, PDF (1/4 Pages) Panasonic Battery Group – Silicon PNP epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XP02401 (XP2401)
Silicon PNP epitaxial planar type
Unit: mm
For general amplification
■ Features
• Two elements incorporated into one package
/ _{(Base-coupled transistors)}
• Reduction of the mounting area and assembly cost by one half
e _{. ■ Basic Part Number}
c _{tage • 2SB0709A (2SB709A) × 2}
n ^d _cle ^s _{■ Absolute Maximum Ratings Ta = 25°C}
a ^e lifecy ^Parameter
Symbol Rating
Unit
t _{Collector-base voltage (Emitter open) VCBO}
−60
V
n ^{u uc Collector-emitter voltage (Base open) VCEO}
−50
V
rod Emitter-base voltage (Collector open) V_EBO
−7
V
te ^{tin r P Collectorcurrent}
I_C
−100
mA
fou Peak collector current
I_CP
−200
mA
ing _type ^{n. Total power dissipation}
P_T
150
mW
in ^{n llow ce atio Junction temperature}
T_j
150
°C
a ^{o ludes fointenance typed typed t inform/en/ Storage temperature}
T_stg −55 to +150 °C
0.20±0.05
5
4
0.12^{+–00..0025}
1
2
3
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
1: Emitter (Tr1)
2: Base
3: Emitter (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: 7R
Internal Connection
5
4
Tr1
Tr2
M _isctinued ^{ipnlcanedmmaaintedniasnconttiinnuueed tybpoeut lateosnic.co.jp ■ Electrical Characteristics Ta = 25°C ± 3°C}
con ^{ed on L a nas Parameter}
Symbol
Conditions
is _lan ^{isc UR .pa Collector-base voltage (Emitter open)}
e/D ^{p d ing on Collector-emitter voltage (Base open)}
D_{anc llow mic Emitter-base voltage (Collector open)}
ten ^{fo .se Collector-base cutoff current (Emitter open)}
in isit ^ww Collector-emitter cutoff current (Base open)
Ma e ^{v ://w} Forward current transfer ratio
as ttp _{hFE ratio} *
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
h_FE(Small/
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
I_E = −10 µA, I_C = 0
V_CB = −20 V, I_E = 0
V_CE = −10 V, I_B = 0
V_CE = −10 V, I_C = −2 mA
V_CE = −10 V, I_C = −2 mA
Ple ^h Large)
123
Min Typ Max Unit
−60
V
−50
V
−7
V
− 0.1 µA
−100 µA
160
460

0.50 0.99

Collector-emitter saturation voltage
V_CE(sat) I_C = −100 mA, I_B = −10 mA
− 0.3 − 0.5 V
Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
2.7
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Ratio between 2 elements
Publication date: February 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00155BED
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