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DRA5114E0L Datasheet, PDF (2/5 Pages) Panasonic Battery Group – DRA5114E Silicon PNP epitaxial planar type
DRA5114E
DRA5114E_PT-Ta
PT  Ta
250
200
150
100
50
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
DRA5114E_VCEsat-IC
VCE(sat)  IC
−10
IC / IB = 20
−1
− 0.1
Ta = 85°C
−30°C
25°C
− 0.01
− 0.1
−1
−10
−100
Collector current IC (mA)
DRA5114E_IC-VCE
IC  VCE
−120
Ta = 25°C
−100
IB = −800 µA
−700 µA
−80
−600 µA
−500 µA
−60
−400 µA
−40
−300 µA
−20
−200 µA
0
−100 µA
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
DRA5114E_IO-VIN
IO  VIN
−10 VO = −5 V
−1
−10−1
Ta = 85°C
25°C
−10−2
−30°C
−10−3
0
− 0.5 −1.0 −1.5 −2.0
Input voltage VIN (V)
DRA5114E_hFE-IC
hFE  IC
300
VCE = −10 V
250
200
Ta = 85°C
25°C
150
100
−30°C
50
0
− 0.1
−1
−10
−100
Collector current IC (mA)
DRA5114E_VIN-IO
VIN  IO
−100
VO = − 0.2 V
−10
25°C
−30°C
−1
Ta = 85°C
− 0.1
− 0.1
−1
−10
−100
Output current IO (mA)
Ver. DED
2