DRA5114E0L Datasheet, PDF (1/5 Pages) Panasonic Battery Group – DRA5114E Silicon PNP epitaxial planar type

DRA5114E
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC5114E
DRA2114E in SMini3 type package
 Features
 Low collector-emitter saturation voltage V_CE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
 Marking Symbol: LB
 Packaging
DRA5114E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
V_CBO
–50
V
V_CEO
–50
V
I_C
–100
mA
P_T
150
mW
T_j
150
°C
T_stg –55 to +150 °C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
R₁
B
R₂
SMini3-F2-B
SC-85

C
E
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Resistance value
R₁
10
kΩ
R₂
10
kΩ
Min Typ Max Unit
Collector-base voltage (Emitter open)
V_CBO I_C = –10 µA, I_E = 0
–50
V
Collector-emitter voltage (Base open)
V_CEO I_C = –2 mA, I_B = 0
–50
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = –50 V, I_E = 0
– 0.1 µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = –50 V, I_B = 0
– 0.5 µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = –6 V, I_C = 0
– 0.5 mA
Forward current transfer ratio
h_FE V_CE = –10 V, I_C = –5 mA
35

Collector-emitter saturation voltage
V_CE(sat) I_C = –10 mA, I_B = – 0.5 mA
– 0.25 V
Input voltage (ON)
V_I(on) V_CE = – 0.2 V, I_C = –5 mA
–2.1
V
Input voltage (OFF)
V_I(off) V_CE = –5 V, I_C = –100 µA
– 0.8
V
Input resistance
R₁
–30% 10 +30% kΩ
Resistance ratio
R₁ / R₂
0.8
1.0
1.2

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2012
Ver. DED
1