AN8771NFH Datasheet, PDF (7/11 Pages) Panasonic Semiconductor – Pre-amplifier IC for MD

AN8771NFH
s Electrical Characteristics at T_a = 25°C (continued)
Parameter
Symbol
Conditions
Min Typ Max Unit
BDO high-level voltage
BDO low-level voltage
RFBDO detection current 1
V_BDOH V₁₇ < V_REF + 50 mV
2.1  3.0 V
V_BDOL V₅₄: Apply voltage so as to get
V₁₇ = V_REF + 200 mV
0  0.4 V
I_CRFBDO1 V₂₆: Apply voltage 100 mV higher 0.33 0.50 0.75 µA
than that of at open
RFBDO detection current 2
RFBDO detection operation
I_CRFBDO2 V₂₆ = V_REF + 0.3 V
t_RFB V₄₆: 500 kHz sine wave
(200 mV[p-p] → 0 mV[p-p])
V₂₆: Fix to DC voltage at which
200 mV[p-p] is inputted to V₄₆
6.7 10 15 µA
15 30 60 µs
3T component envelope
extracting gain
G_3TMON V₄₁: 720 kHz AM sine wave modulation 15.5 18.5 21.5 dB
(500 mV[p-p])
AM sine wave: 5.3 kHz 20%
OFTO
EFM detection gain
G_EFMOF V₄₁: 720 kHz AM sine wave modulation −6 −3
0
dB
(500 mV[p-p])
AM modulation: 5.3 kHz 20%
EFM detection output mode
OFTIN detection level
OFTR high-level voltage
OFTR low-level voltage
TEMP amp. gain
REFO gain
∆V_OFTI V₂₇: Sweep V_REF − 100 mV to
V_REF + 100 mV in DC
35 50 65 mV
V_OFTH V₂₇ = V_REF − 100 mV
2.1  3.0 V
V_OFTL V₂₇ = V_REF + 100 mV
0  0.4 V
G_TM V₅ = V_REF ± 0.5 V
−2 0
2
dB
G_REFO V₃: 20 kHz sine wave (0.5 V[p-p]) −2
0
2
dB
s Technical Data
1. Operation mode set by mode setting
<RF amp. gain> <IV amp.>
Operation mode
Setting pin
Pit high reflection factor mode Pit mode
Pit low reflection factor mode MO pit playback mode
Group mode
MO group playback mode
Operation off mode
MO recording mode
NREC
High-level
High-level
High-level
Low-level
RFSWPG
High-level
High-level
Low-level

RFSWHL
High-level
Low-level
Low-level

<OFTO output signal>
Setting pin
Operation mode
EFM detection output mode
AS output mode
RFSWPG
High-level
Low-level
SDD00018CEB
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