AN8771NFH Datasheet, PDF (6/11 Pages) Panasonic Semiconductor – Pre-amplifier IC for MD

AN8771NFH
s Electrical Characteristics at T_a = 25°C (continued)
Parameter
Symbol
Conditions
Min Typ Max Unit
ADIP frequency characteristics 1 ∆G_ADf1 V₅₄: 18 kHz sine wave (150 mV[p-p],  −3
0
dB
DC offset voltage = V_REF − 80 mV)
V₁₉ = V_REF + 0.5 V
ADIP frequency characteristics 2 ∆G_ADf2 V₅₄: 26 kHz sine wave (150 mV[p-p],  −3
0
dB
DC offset voltage = V_REF − 80 mV)
V₁₉ = V_REF + 0.5 V
RF amp. gain in group mode
(playback)
G_RFG V₅₄: 100 kHz sine wave (18 mV[p-p]) 18.8 20.8 22.8 dB
Group mode
RF amp. gain in low reflection factor G_RFPL V₅₄: 100 kHz sine wave (120 mV[p-p]) 1.5 3.5 5.5 dB
(playback)
Pit low reflection factor mode
RF amp. gain in high reflection factor G_RFPH V₅₄: 100 kHz sine wave (300 mV[p-p]) −8 −6 −4 dB
(playback)
Pit high reflection factor mode
RF amp. frequency characteristics ∆G_RFG V₅₄: 4 MHz sine wave (18 mV[p-p]) −3   dB
in group mode
Group mode
(playback)
RF amp. frequency characteristics ∆G_RFPL V₅₄: 4 MHz sine wave (120 mV[p-p]) −3   dB
in low reflection factor
Pit low reflection factor mode
(playback)
RF amp. frequency characteristics ∆G_RFPH V₅₄: 4 MHz sine wave (300 mV[p-p]) −3   dB
in high reflection factor
Pit high reflection factor mode
(playback)
EQ gain adjustment 1
EQ gain adjustment 2
∆G_EQ1 V₅₄: 200 Hz, 720 kHz sine wave
(100 mV[p-p])
 1.5 3.0 dB
V₄₅ = GND, V₄₄ = V_REF − 0.2 V
∆G_EQ2 V₅₄: 200 Hz, 720 kHz sine wave 3.5 5.0  dB
(100 mV[p-p])
V₄₅ = 400 mV, V₄₄ = V_REF − 0.2 V
AGC operation
V_OMRFV V₄₆: 500 kHz sine wave (200 mV[p-p]) 420 520 620 mV
DSL pulse output duty
T_DSL V₄₁: 720 kHz sine wave (500 mV[p-p]) 47 50 53 %
NRF detection operation
V_RFD V₄₆: 500 kHz sine wave (Amplitude sweep) 58 83 108 mV
NRF detection high-level voltage V_RFDH V₄₆: 500 kHz sine wave (Amplitude sweep) 2.1  3.0 V
NRF detection low-level voltage
V_RFDL V₄₆ : 500 kHz sine wave (Amplitude sweep) 0
 0.4
V
TRCRS detection voltage 1
V_H1TCR V₇: Sweep + 0 to max. +150 mV
in DC refering to V₆ as reference
63 90 120 mV
TRCRS detection voltage 2
V_H2TCR V₇: Sweep + 0 to max. −150 mV −120 −90 −63 mV
in DC refering to V₆ as reference
TRCRS high-level voltage
V_TCRH V₇ = V₆ + 100 mV
2.1  3.0 V
TRCRS low-level voltage
V_TCRL V₇ = V₆ − 100 mV
0  0.4 V
ASBDO detection current 1
I_CBDO1 Apply to the pin 24 DC voltage which 0.7 1.0 1.5 µA
is 200 mV higher than that at open
ASBDO detection current 2
I_CBDO2 Apply to the pin 24 DC voltage which 17 26 39 µA
is 1.1 V higher than that at open
6
SDD00018CEB