XN6542 Datasheet, PDF (5/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
Characteristics charts of Tr2
I_C — V_CE
80
Ta=25˚C
70
IB=2.0mA
1.8mA
60
1.6mA
50
1.4mA
40
1.2mA
1.0mA
30
0.8mA
20
0.6mA
0.4mA
10
0.2mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
I_C — V_BE
60
25˚C
VCE=10V
50
Ta=75˚C
– 25˚C
40
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
XN6542
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
25˚C
Ta=75˚C
0.1
– 25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
h_FE — I_C
120
VCE=10V
100
80
Ta=75˚C
60
25˚C
40
–25˚C
20
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
600
VCB=10V
Ta=25˚C
500
f_T — I_E
400
300
200
100
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
C_ob — V_CB
3.0
f=1MHz
IE=0
Ta=25˚C
2.5
2.0
1.5
1.0
0.5
0
1 2 3 5 10 20 30 50 100
Collector to base voltage VCB (V)
C_re — V_CE
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
1 2 3 5 10 20 30 50 100
Collector to emitter voltage VCE (V)
5