XN6542 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN6542
Silicon NPN epitaxial planer transistor
For high frequency amplification, oscillation, and mixing (Tr1),
For medium-frequency amplification (Tr2)
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SC2480+2SC4444
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
30
V
Tr1
Collector to emitter voltage
V_CEO
20
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
50
mA
Collector to base voltage
V_CBO
45
V
Tr2
Collector to emitter voltage
V_CEO
35
V
Emitter to base voltage
V_EBO
4
V
Collector current
I_C
50
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 5Z
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
1