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XP5601 Datasheet, PDF (4/5 Pages) Panasonic Semiconductor – Silicon PNP(NPN) epitaxial planer transistor | |||
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Composite Transistors
fT â IE
160
VCB=â10V
Ta=25ËC
140
120
100
80
60
40
20
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
Cob â VCB
8
f=1MHz
7
IE=0
Ta=25ËC
6
5
4
3
2
1
0
â1 â2 â3 â5 â10 â20 â30 â50 â100
Collector to base voltage VCB (V)
20 VCB=â5V
18
Rg=50kâ¦
Ta=25ËC
16
NF â IE
14
12
f=100Hz
10
8
1kHz
6
10kHz
4
2
0
0.1 0.2 0.3 0.5 1
2 3 5 10
Emitter current IE (mA)
h Parameter â IE
300
200
hfe
100
50
30
hoe (µS)
20
10
5
hie (kâ¦)
3
2
VCE= â 5V
f=270Hz
hre (Ã10â4)
Ta=25ËC
1
0.1 0.2 0.3 0.5 1 2 3 5 10
Emitter current IE (mA)
Characteristics charts of Tr2
IC â VCE
60
Ta=25ËC
IB=160µA
50
140µA
40
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
1200
1000
IB â VBE
VCE=10V
Ta=25ËC
800
600
400
200
0
0
0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
XP5601
NF â IE
6
VCB=â5V
f=1kHz
5
Rg=2kâ¦
Ta=25ËC
4
3
2
1
0
0.01 0.03 0.1 0.3 1 3 10
Emitter current IE (mA)
h Parameter â VCE
300
IE=2mA
200
f=270Hz
hfe
Ta=25ËC
100
50
30
20
hoe (µS)
10
5
3 hre (Ã10â4)
2
hie (kâ¦)
1
0.1 0.2 0.3 0.5 1
2 3 5 10
Collector to emitter voltage VCE (V)
IC â VBE
240
VCE=10V
200
160
25ËC
120
Ta=75ËC
80
â 25ËC
40
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
4
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