XP5601 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Silicon PNP(NPN) epitaxial planer transistor

Composite Transistors
s ^{Electrical Characteristics (Ta=25˚C)}
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
Conditions
min
I_C = –10µA, I_E = 0
–60
I_C = –2mA, I_B = 0
–50
I_E = –10µA, I_C = 0
–7
V_CB = –20V, I_E = 0
V_CE = –10V, I_B = 0
V_CE = –10V, I_C = –2mA
160
I_C = –100mA, I_B = –10mA
V_CB = –10V, I_E = 1mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
XP5601
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1 _{Ratio between 2 elements}
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
Conditions
min
I_C = 10µA, I_E = 0
60
I_C = 2mA, I_B = 0
50
I_E = 10µA, I_C = 0
7
V_CB = 20V, I_E = 0
V_CE = 10V, I_B = 0
V_CE = 10V, I_C = 2mA
160
I_C = 100mA, I_B = 10mA
V_CB = 10V, I_E = –2mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
typ max Unit
V
V
V
0.1
µA
100
µA
460
0.1
0.3
V
150
MHz
3.5
pF
2