XP04654 Datasheet, PDF (4/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)

XP04654
Characteristics charts of Tr2
Switching time measurement circuit
t_on , t_off test circuit
V_BB
2 kΩ
0.1 µF 52 Ω
V_IN
51 Ω
V_CC = −1.5 V
62 Ω
V_OUT
V_IN
t_stg test circuit
V_BB = −10 V V_CC = −3 V
508 Ω
0.1 µF 34 Ω
30 Ω
V_OUT
51 Ω
V_IN ⁰
10%
90%
V_OUT
90% _10%
t_on
V_IN = −5.8 V
V_BB = Ground
t_off
V_IN = 9.8 V
V_BB = −8.0 V
V_IN ⁰
V_OUT
90%
90%
t_stg
V_IN = 9.0 V
I_C  V_CE
−60
Ta = 25°C
−50
IB = −600 µA
−500 µA
−40
−400 µA
−300 µA
−30
−200 µA
−20
−100 µA
−10
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage V_CE (V)
−100
−10
−1
V_CE(sat)  I_C
IC / IB = 10
T_a = 75°C
25°C
−25°C
−100
−10
−1
V_BE(sat)  I_C
IC / IB = 10
Ta = −25°C
25°C
75°C
− 0.1
− 0.1
− 0.01
−1
−10
−100
−1 000
Collector current I_C (mA)
− 0.01
−1
−10
−100
−1 000
Collector current I_C (mA)
h_FE  I_C
240
VCE = −10 V
200
160
120
Ta = 75°C
80
25°C
40
−25°C
0
− 0.1
−1
−10
−100
Collector current I_C (mA)
f_T  I_E
2 400
VCB = −10 V
f = 200 MHz
2 000
Ta = 25°C
1 600
1 200
800
400
0
1
10
100
Emitter current I_E (mA)
C_ob  V_CB
2.4
IE = 0
f = 1 MHz
Ta = 25°C
2.0
1.6
1.2
0.8
0.4
0
−1
−10
−100
Collector-base voltage V_CB (V)
4
SJJ00188BED