XP04654 Datasheet, PDF (3/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)

Characteristics charts of Tr1
Switching time measurement circuit
t_on , t_off test circuit
V_IN = 10 V 3.3 kΩ
220 Ω
50 Ω
3.3 kΩ
VBB = −3 V
0.1 µF
V_OUT
50 Ω
VCC = 3 V
t_stg test circuit
A _{910 Ω}
V_IN = 10 V ^{0.1 µF} 500 Ω
50 Ω
500 Ω
VBB = 2 V
0.1 µF
VOUT
1 kΩ
90 Ω
V_CC = 10 V
VIN
VOUT
10%
10%
90%
ton
90%
toff
10%
VIN
VOUT
tstg
10%
(Waveform at A)
XP04654
I_C  V_CE
120
T_a = 25°C
100
I_B = 3.0 mA
2.5 mA
80
2.0 mA
1.5 mA
60
1.0 mA
40
0.5 mA
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-emitter voltage V_CE (V)
h_FE  I_C
600
V_CE = 1 V
500
400
300
200
T_a = 75°C
25°C
100
−25°C
0
0.1
1
10
100
Collector current I_C (mA)
V_CE(sat)  I_C
100
IC / IB = 10
10
1
Ta = 75°C
25°C
−25°C
0.1
V_BE(sat)  I_C
100
10
1
Ta = −25°C
25°C
75°C
0.1
0.01
0.1
1
10
100
Collector current I_C (mA)
0.01
1
10
100
1 000
Collector current I_C (mA)
f_T  I_E
600
VCB = 10 V
Ta = 25°C
500
400
300
200
100
0
−1
−10
−100
−1 000
Emitter current I_E (mA)
C_ob  V_CB
6
IE = 0
f = 1 MHz
Ta = 25°C
5
4
3
2
1
0
1
10
100
Collector-base voltage V_CB (V)
SJJ00188BED
3