XP04601 Datasheet, PDF (4/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
f_T — I_E
60
Ta=25˚C
IB=160µA
50
140µA
40
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
1200
1000
NV — I_C
VCE=10V
Ta=25˚C
800
600
400
200
0
0
0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
XP04601
240
VCE=10V
200
160
120
25˚C
Ta=75˚C
80
– 25˚C
40
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
Characteristics charts of Tr2
I_C — V_CE
– 60
Ta=25˚C
IB= – 300µA
– 50
– 250µA
– 40
– 200µA
– 30
–150µA
– 20
–100µA
–10
– 50µA
0
0 –2 –4 –6 –8 –10 –12 –14 –16 –18
Collector to emitter voltage VCE (V)
I_C — I_B
– 60
VCE= – 5V
Ta=25˚C
– 50
– 40
– 30
– 20
–10
0
0
–100 –200 –300 –400
Base current IB (µA)
– 400
– 350
I_B — V_BE
VCE= – 5V
Ta=25˚C
– 300
– 250
– 200
– 150
–100
– 50
0
0
–0.4 –0.8 –1.2 –1.6
Base to emitter voltage VBE (V)
– 240
– 200
–160
I_C — V_BE
VCE= – 5V
25˚C
Ta=75˚C –25˚C
–120
– 80
– 40
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
V_CE(sat) — I_C
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.03
– 0.01
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
h_FE — I_C
600
VCE= – 10V
500
400
Ta=75˚C
300
25˚C
– 25˚C
200
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
4