XP04601 Datasheet, PDF (1/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XP04601 (XP4601)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For general amplification
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
s ^{Basic Part Number of Element}
q 2SD0601A(2SD601A) + 2SB0709A(2SB709A)
0.2±0.05
6
5
4
1
23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10°
Unit: mm
0.12^{+–00..0025}
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
60
V
Collector to emitter voltage V_CEO
50
V
Tr1
Emitter to base voltage
V_EBO
7
V
Collector current
I_C
100
mA
Peak collector current
I_CP
200
mA
Collector to base voltage
V_CBO
–60
V
Collector to emitter voltage V_CEO
–50
V
Tr2
Emitter to base voltage
V_EBO
–7
V
Collector current
I_C
–100
mA
Peak collector current
I_CP
–200
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1 : Emitter (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
SMini6-G1 Package
Marking Symbol: 5C
Internal Connection
Tr1
1
6
2
5
3
4
Tr2
Note) The Part number in the Parenthesis shows conventional part number.
1