XP04286 Datasheet, PDF (4/4 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
Characteristics charts of Tr2
– 240
– 200
–160
–120
I_C — V_CE
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 80
–0.6mA
–0.5mA
–0.4mA
– 40
–0.3mA
–0.2mA
0
–0.1mA
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
V_CE(sat) — I_C
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
XP04286
h_FE — I_C
160
VCE= –10V
120
Ta=75˚C
80
25˚C
– 25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
I_O — V_IN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
–0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Input voltage VIN (V)
–100
– 30
–10
V_IN — I_O
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
4