XP04286 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
s ^{Electrical Characteristics (Ta=25˚C)}
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
R₁
R₁/R₂
f_T
Conditions
I_C = 10µA, I_E = 0
I_C = 2mA, I_B = 0
V_CB = 50V, I_E = 0
V_CE = 50V, I_B = 0
V_EB = 6V, I_C = 0
V_CE = 10V, I_C = 5mA
I_C = 10mA, I_B = 0.3mA
V_CC = 5V, V_B = 0.5V, R_L = 1kΩ
V_CC = 5V, V_B = 2.5V, R_L = 1kΩ
min
50
50
80
4.9
–30%
V_CB = 10V, I_E = –2mA, f = 200MHz
XP04286
typ max Unit
V
V
0.1
µA
0.5
µA
0.2
mA
400
0.25
V
V
0.2
V
4.7 +30% kΩ
0.1
150
MHz
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
R₁
R₁/R₂
f_T
Conditions
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
V_CB = –50V, I_E = 0
V_CE = –50V, I_B = 0
V_EB = –6V, I_C = 0
V_CE = –10V, I_C = –5mA
I_C = –10mA, I_B = – 0.3mA
V_CC = –5V, V_B = – 0.5V, R_L = 1kΩ
V_CC = –5V, V_B = –2.5V, R_L = 1kΩ
min
–50
–50
30
–4.9
–30%
V_CB = –10V, I_E = 1mA, f = 200MHz
typ max Unit
V
V
– 0.1 µA
– 0.5 µA
–1.5 mA
– 0.25 V
V
– 0.2
V
1
+30% kΩ
0.1
80
MHz
2