XP03316 Datasheet, PDF (4/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

XP03316
Characteristics charts of Tr2
I_C  V_CE
–140
–120
–100
IB = –1.0 mA
– 0.9 mA
– 0.8 mA
– 0.7 mA
– 0.6 mA
– 0.5 mA
–80
– 0.4 mA
–60
– 0.3 mA
–40
– 0.2 mA
–20
– 0.1 mA
Ta = 25°C
0
0 –2 –4 –6 –8 –10 –12
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
–10
I_C / I_B = 10
–1
– 0.1
25°C ^{Ta = 85°C}
–25°C
– 0.01
– 0.1
–1
–10
–100
Collector current I_C (mA)
C_ob  V_CB
10
f = 1 MHz
Ta = 25°C
I_O  V_IN
–100
V_O = –5 V
Ta = 25°C
h_FE  I_C
300
Ta = 85°C
V_CE = –10V
250
25°C
200
–25°C
150
100
50
0
– 0.1
–1
–10 –100 –1 000
Collector current I_C (mA)
V_IN  I_O
–10 _{VO = – 0.2 V}
Ta = 25°C
–10
–1
–1
1
0
10
20
30
40
Collector-base voltage V_CB (V)
– 0.1
0
– 0.5 –1.0 –1.5
–2.0
Input voltage V_IN (V)
– 0.1
– 0.1
–1
–10
–100
Output current I_O (mA)
4
SJJ00281AED