XP03316 Datasheet, PDF (3/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Characteristics charts of Tr1
I_C  V_CE
140
IB = 1.0 mA
120
0.9 mA
0.8 mA
0.7 mA
0.6 mA
100
0.5 mA
0.4 mA
80
0.3 mA
60
0.2 mA
40
0.1 mA
20
Ta = 25°C
0
0 2 4 6 8 10 12
Collector-emitter voltage V_CE (V)
C_ob  V_CB
10
f = 1 MHz
Ta = 25°C
V_CE(sat)  I_C
1
I_C / I_B = 10
0.1
T_a = 85°C
25°C
–25°C
0.01
0.1
1
10
100
Collector current I_C (mA)
1 000
100
I_O  V_IN
VO = 5 V
Ta = 25°C
XP03316
h_FE  I_C
350
VCE = 10V
Ta = 85°C
300
25°C
250
–25°C
200
150
100
50
0
1
10
100
1 000
Collector current I_C (mA)
V_IN  I_O
10 _{VO = 0.2 V}
Ta = 25°C
10
1
1
1
0
10
20
30
40
Collector-base voltage V_CB (V)
0.1
0
1
2
3
4
5
Input voltage V_IN (V)
0.1
0.1
1
10
100
Output current I_O (mA)
SJJ00281AED
3