XN4601 Datasheet, PDF (4/5 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
f_T — I_E
160
VCB=–10V
Ta=25˚C
140
120
100
80
60
40
20
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
C_ob — V_CB
8
f=1MHz
7
IE=0
Ta=25˚C
6
5
4
3
2
1
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Collector to base voltage VCB (V)
20
VCB=–5V
18
Rg=50kΩ
Ta=25˚C
16
NF — I_E
14
12
f=100Hz
10
8
1kHz
6
10kHz
4
2
0
0.1 0.2 0.3 0.5 1
2 3 5 10
Emitter current IE (mA)
h Parameter — I_E
300
200
hfe
100
50
30
hoe (µS)
20
10
5
hie (kΩ)
3
2
VCE= – 5V
f=270Hz
hre (×10^–4)
Ta=25˚C
1
0.1 0.2 0.3 0.5 1 2 3 5 10
Emitter current IE (mA)
Characteristics charts of Tr2
I_C — V_CE
60
Ta=25˚C
IB=160µA
50
140µA
40
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
1200
1000
I_B — V_BE
VCE=10V
Ta=25˚C
800
600
400
200
0
0
0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
XN4601
NF — I_E
6
VCB=–5V
f=1kHz
5
Rg=2kΩ
Ta=25˚C
4
3
2
1
0
0.01 0.03 0.1 0.3 1 3 10
Emitter current IE (mA)
h Parameter — V_CE
300
IE=2mA
200
f=270Hz
hfe
Ta=25˚C
100
50
30
20
hoe (µS)
10
5
3 ^{hre (×10–4)}
2
hie (kΩ)
1
0.1 0.2 0.3 0.5 1
2 3 5 10
Collector to emitter voltage VCE (V)
I_C — V_BE
240
VCE=10V
200
160
120
25˚C
Ta=75˚C
80
– 25˚C
40
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
4