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XN4601 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor | |||
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Composite Transistors
s Electrical Characteristics (Ta=25ËC)
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Conditions
min
IC = 10µA, IE = 0
60
IC = 2mA, IB = 0
50
IE = 10µA, IC = 0
7
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VCE = 10V, IC = 2mA
160
IC = 100mA, IB = 10mA
VCB = 10V, IE = â2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
XN4601
typ max Unit
V
V
V
0.1
µA
100
µA
460
0.1
0.3
V
150
MHz
3.5
pF
q Tr2
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Conditions
min
IC = â10µA, IE = 0
â60
IC = â2mA, IB = 0
â50
IE = â10µA, IC = 0
â7
VCB = â20V, IE = 0
VCE = â10V, IB = 0
VCE = â10V, IC = â2mA
160
IC = â100mA, IB = â10mA
VCB = â10V, IE = 1mA, f = 200MHz
VCB = â10V, IE = 0, f = 1MHz
typ max Unit
V
V
V
â 0.1 µA
â100 µA
460
â0.3 â0.5
V
80
MHz
2.7
pF
2
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