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XN1A312 Datasheet, PDF (4/4 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor | |||
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Composite Transistors
Characteristics charts of Tr2
â160
â140
â120
â100
â 80
â 60
â 40
IC â VCE
Ta=25ËC
IB= â1.0mA
â 0.9mA
â 0.8mA
â 0.7mA
â 0.6mA
â 0.5mA
â 0.4mA
â 0.3mA
â 0.2mA
â 20
â 0.1mA
0
0 â2 â4 â6 â8 â10 â12
Collector to emitter voltage VCE (V)
â100
â 30
â10
VCE(sat) â IC
IC/IB=10
â3
â1
â 0.3
â 0.1
â 0.03
25ËC
â 25ËC
Ta=75ËC
â 0.01
â0.1 â0.3 â1 â3 â10 â30 â100
Collector current IC (mA)
XN1A312
hFE â IC
400
VCE= â10V
300
Ta=75ËC
200
25ËC
â 25ËC
100
0
â1 â3 â10 â30 â100 â300 â1000
Collector current IC (mA)
Cob â VCB
6
f=1MHz
IE=0
Ta=25ËC
5
4
3
2
1
0
â0.1 â0.3 â1 â3 â10 â30 â100
Collector to base voltage VCB (V)
â10000
â 3000
â1000
IO â VIN
VO= â 5V
Ta=25ËC
â 300
â100
â 30
â10
â3
â1
â0.4 â0.6 â0.8 â1.0 â1.2 â1.4
Input voltage VIN (V)
â100
â 30
â10
VIN â IO
VO= â 0.2V
Ta=25ËC
â3
â1
â 0.3
â 0.1
â 0.03
â 0.01
â0.1 â0.3 â1 â3 â10 â30 â100
Output current IO (mA)
4
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