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XN1A312 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor | |||
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Composite Transistors
XN1A312
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Transistors with built-in resistor, Tr1 collecter is connected to
Tr2 base.)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
+0.2
2.8 -0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q UN1212+UN1112
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage VCBO
50
V
Tr1 Collector to emitter voltage VCEO
50
V
Collector current
IC
100
mA
Collector to base voltage VCBO
â50
V
Tr2 Collector to emitter voltage VCEO
â50
V
Collector current
IC
â100
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 to +150
ËC
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
Base (Tr2)
2 : Collector (Tr2)
3 : Emitter (Tr2)
4 : Base (Tr1)
5 : Emitter (Tr1)
EIAJ : SCâ74A
Mini Type Pakage (5âpin)
Marking Symbol: 4P
Internal Connection
Tr1
5
1
4
3
2
Tr2
1
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