XP1401 Datasheet, PDF (3/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
NF — I_E
6
VCB=–5V
f=1kHz
5
Rg=2kΩ
Ta=25˚C
4
3
2
1
0
0.01 0.03 0.1 0.3 1 3 10
Emitter current IE (mA)
h Parameter — V_CE
300
IE=2mA
200
f=270Hz
hfe
Ta=25˚C
100
50
30
20
hoe (µS)
10
5
3 ^{hre (×10–4)}
2
hie (kΩ)
1
–1 –2 –3 –5 –10 –20 –30 –50 –100
Collector to emitter voltage VCE (V)
NF — I_E
20 _VCB=–5V
18
Rg=50kΩ
Ta=25˚C
16
14
12
f=100Hz
10
8
1kHz
6
10kHz
4
2
0
0.1 0.2 0.3 0.5 1
2 3 5 10
Emitter current IE (mA)
XP1401
h Parameter — I_E
300
200
hfe
100
50
30
hoe (µS)
20
10
5
hie (kΩ)
3
2
VCE=–5V
f=270Hz
hre (×10^–4)
Ta=25˚C
1
0.1 0.2 0.3 0.5 1 2 3 5 10
Emitter current IE (mA)
3