XP1401 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
P_T — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — V_CE
– 60
Ta=25˚C
– 50
IB= – 300µA
– 250µA
– 40
– 200µA
– 30
–150µA
– 20
–100µA
– 10
– 50µA
0
0 –2 –4 –6 –8 –10 –12 –14 –16 –18
Collector to emitter voltage VCE (V)
XP1401
I_C — I_B
– 60
VCE= – 5V
Ta=25˚C
– 50
– 40
– 30
– 20
–10
0
0
–100 –200 –300 –400
Base current IB (µA)
– 400
– 350
I_B — V_BE
VCE= – 5V
Ta=25˚C
– 300
– 250
– 200
–150
–100
– 50
0
0
–0.4 –0.8 –1.2 –1.6
Base to emitter voltage VBE (V)
– 240
– 200
–160
I_C — V_BE
VCE= – 5V
25˚C
Ta=75˚C –25˚C
–120
– 80
– 40
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
V_CE(sat) — I_C
–10
IC/IB=10
–3
–1
25˚C ^Ta=75˚C
– 0.3
– 25˚C
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
h_FE — I_C
600
VCE= –10V
500
400
Ta=75˚C
300 25˚C
– 25˚C
200
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
f_T — I_E
160
VCB=–10V
Ta=25˚C
140
120
100
80
60
40
20
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
C_ob — V_CB
8
f=1MHz
7
IE=0
Ta=25˚C
6
5
4
3
2
1
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Collector to base voltage VCB (V)
2