XN4609 Datasheet, PDF (3/5 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
Common characteristics chart
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
XN4609
Characteristics charts of Tr1
I_C — V_CE
1.2
Ta=25˚C
IB=4.0mA
1.0
3.5mA
3.0mA
0.8
2.5mA
0.6
2.0mA
1.5mA
0.4
1.0mA
0.2
0.5mA
0
0123456
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
100
IC/IB=25
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
– 25˚C
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
V_BE(sat) — I_C
100
IC/IB=10
30
10
3
25˚C
1 ^{Ta=–25˚C}
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1200
1000
h_FE — I_C
VCE=2V
800
Ta=75˚C
600
25˚C
– 25˚C
400
200
0
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
f_T — I_E
400
VCB=10V
Ta=25˚C
350
300
250
200
150
100
50
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Emitter current IE (mA)
C_ob — V_CB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
1 2 3 5 10 20 30 50 100
Collector to base voltage VCB (V)
3