XN4609 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
s ^{Electrical Characteristics (Ta=25˚C)}
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON Resistance
V_CBO
V_CEO
V_EBO
I_CBO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
R_on*2
Conditions
min
I_C = 10µA, I_E = 0
25
I_C = 1mA, I_B = 0
20
I_E = 10µA, I_C = 0
12
V_CB = 25V, I_E = 0
V_CE = 2V, I_C = 0.5A^*1
200
V_CE = 2V, I_C = 1A^*1
60
I_C = 0.5A, I_B = 20mA
I_C = 0.5A, I_B = 20mA
V_CB = 10V, I_E = –50mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
XN4609
typ max Unit
V
V
V
0.1
µA
800
0.13 0.4
V
1.2
V
200
MHz
10
pF
1.0
Ω
q Tr2
Parameter
Symbol
Conditions
min
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1 _{Pulse measurement}
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
I_C = –10µA, I_E = 0
–60
I_C = –2mA, I_B = 0
–50
I_E = –10µA, I_C = 0
–7
V_CB = –20V, I_E = 0
V_CE = –10V, I_E = 0
V_CE = –10V, I_C = –2mA
160
I_C = –100mA, I_B = –10mA
V_CB = –10V, I_E = 1mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
*2 _{Ron test circuit}
1kΩ
IB=1mA
VB
VA
VV
f=1kHz
V=0.3V
Ron=
VB
VA–VB
!1000(Ω)
typ
– 0.3
80
2.7
max
– 0.1
–100
460
Unit
V
V
V
µA
µA
V
MHz
pF
2