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FC551601 Datasheet, PDF (3/5 Pages) Panasonic Semiconductor – Silicon N-channel MOS FET
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This product complies with the RoHS Directive (EU 2002/95/EC).
FC551601
FC551601_ ID-VDS
ID  VDS
100
Ta = 25°C
80
VGS = 4.0 V
60
2.5 V
40
20
2.1 V
1.8 V
0
0 0.1 0.2 0.3 0.4 0.5
Drain-source voltage VDS (V)
FC551601_ RDS(on)-ID
RDS(on)  ID
102
Ta = 25°C
FC551601_ ID-VGS
ID  VGS
102
VDS = 3 V
10
1
Ta = 85°C
10−1
25°C
10−2
−30°C
10−3
0 0.5 1.0 1.5 2.0 2.5
Gate-source voltage VGS (V)
FC65P4T601_TPaT-Ta
200
FC551601_ RDS(on)-VGS
RDS(on)  VGS
102
Ta = 25°C
ID = 0.01 A
10
1
10−1
0
2
4
6
8 10
Gate-source voltage VGS (V)
150
10
VGS = 2.5 V
4.0 V
100
1
50
10−1
10−1
1
10
102
Drain current ID (mA)
FC551601_Ciss , Crss , Coss -VDS
Ciss , Crss , Coss  VDS
25
Ta = 25°C
20
15
Ciss
10
Coss
5
Crss
0
0
5
10
15
20
Drain-source voltage VDS (V)
0
0
40
80
120
160
Ambient temperature Ta (°C)
FC551601_|Yfs|-ID
Yfs  ID
1
Ta = 25°C
VDS = 3 V
10−1
10−2
10−3
1
10
102
103
Drain current ID (mA)
Ver. AED
3
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