FC551601 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon N-channel MOS FET

This product complies with the RoHS Directive (EU 2002/95/EC).
FC551601
Silicon N-channel MOS FET
For switching circuits
 Overview
FC551601 is N-channel dual type small signal MOS FET employed small size
surface mounting package.
 Features
 Low drain-source ON resistance: R_DS(on) typ. = 6 W (V_GS = 4.0 V)
 High-speed switching
 Small size surface mounting package: SMini5-F3-B
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Drain-source surrender voltage V_DSS
60
V
FET1 ^{Gate-source surrender voltage}
V_GSS
±12
V
FET2 _{Drain current}
I_D
100
mA
Peak drain current
I_DP
200
mA
Total power dissipation
P_T
150
mW
Overall Channel temperature
T_ch
150
°C
Storage temperature
T_stg –55 to +150 °C
 Package
 Code
SMini5-F3-B
 Pin Name
1: Gate (FET1)
2: Source (FET1/2)
3: Gate (FET2)
4: Drain (FET2)
5: Drain (FET1)
 Marking Symbol: V5
 Internal Connection
(D1)
(D2)
5
4
FET1
FET2
1
2
3
(G1) (S) (G2)
Publication date: January 2011
Ver. AED
1