DB2141300L Datasheet, PDF (3/5 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Doc No. TT4-EA-11458
Revision. 2
Product Standards
Schottky Barrier Diode
DB2141300L
Technical Data ( reference )
1.E+01
1.E+00
1.E-01
IF - VF
Ta = 125 °C
85 °C
1.E-02
1.E-03
1.E-04
25 °C
-40 °C
1.E-05
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
0
IR - VR
Ta = 125 °C
85 °C
25 °C
-40 °C
5 10 15 20 25 30 35 40
Reverse voltage VR (V)
350
300
250
200
150
100
50
0
0
Ct - VR
Ta = 25 °C
f = 1 MHz
5 10 15 20 25 30 35 40
Reverse voltage VR (V)
1000
Rth - t
(1)
(2)
100 _{Rth(j-l) = 10 °C/W}
(3)
10
1
0.001 0.01
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
0.1
1
10
Time t (s)
100 1000
2.5
tp/T
2
DC
1.5
1/2
IF(AV) - Tl
IF
tp
T
VR = 20 V
Tj = 125 °C
1
1/4 _{Sine Wave}
0.5
0
0 25 50 75 100 125 150 175
Lead temperature Tl (°C)
PF(AV) - IF(AV)
1
0.9 IF
tp
0.8
T
Sine Wave
DC
1/2
0.7
1/4
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2009-08-17
Revised : 2013-04-19