DB2141300L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Doc No. TT4-EA-11458
Revision. 2
DB2141300L
Silicon epitaxial planar type
For rectification
 Features
 Low forward voltage and small reverse leakage current
 Forward current (Average) IF(AV) = 2 A rectification is possible
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: 4N
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Reverse voltage (direct current)
VR
40
V
Forward current (average) ^*1
IF(AV)
2.0
A
Non-repetitive peak forward surge current ^*2 IFSM
30
A
Junction temperature ^*1
Tj
150
°C
Operating ambient temperature
Topr -40 to +85
°C
Storage temperature
Tstg -55 to +150 °C
Note: *1 Tl = 80 °C
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Product Standards
Schottky Barrier Diode
DB2141300L
1.25
0.6
2
Unit: mm
0.12
1
0.8
0.55
1. Cathode
2. Anode
Panasonic
JEITA
Code
SMini2-F4-B-B
SC-108A
―
Internal Connection
2
1
Established : 2009-08-17
Revised : 2013-04-19
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