AO3400A Datasheet, PDF (3/4 Pages) Alpha Industries – N-Channel Enhancement Mode Field Effect Transistor

AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
35
4.5V
30
3V
25
20
15
2.5V
V_GS=10V, I_D=8.5A
10
5
V_GS=4.5V, I_D=8.5A
V_GSV=2_GV_{S=2.5V, ID=5A}
0
0
1
2
V_3DS=5V, I_D4=11A ₅
Maxi_Fm_igu_um_{re 1}B_:o_Od_ny_-VR-D^D_e^S_gio^(iVod^one^ltCsC_h)o_arn_at_cin_teu_rio_su_tis_csCurrent
20
16
12
8
4
0
0
V_DS=5V
0.7
25
12₁5°C
1 uA
5
100 nA
1.5
20
2⁵4^°C
30.0
36.0
23
29.0
34.5
45
26
0.5
1
1.5
2
2.5
3
0.72
1
Figure 2: TraVn^Gs^Sf(eVroClthsa) racteristic⁴s^.5
60
55
50
45
Q_g 40
35
30
25
1.8
V_GS=2.5V
1.5
V_GS=10V, V_DS=15V, I_D=8.5₁A_.2
V_GS=4.5V
V_GS=10V, V_DS=15V, R_L=1.80Ω.9, R_GEN=3Ω
900
88
6_ID5_=5A
0_V.9_G5_S=4.5V
1100
1.5
10
1.8
3.75
3.2
V_GS=10V
I_D=5.7A
20
V_GS=10V
15
0
5
10
15
20
I_D (A) ^{IF=8.5A, dI/dt=100A/µs}
Figure 3: On-Resistance vs^I.FD⁼r⁸a^.i⁵n^AC^,u^drr^Ie^/dnt^t=a¹nd^00A/µs
0.6
-50
3.5
21.5
2.7
-25 0 25 50 75 100 125 150 175
16.8
Temperature (°C)
Figure 4: On-Res⁸istance vs. Junction
Gate Voltage
Temperature
60
1.0E+⁸0^.1⁵
I_D=5.7A
0.0
1.0E+₄0₀0
A
50
#D₁I_.V_0E/0_-0! ₁
125°C
40
125°C
1.0E-02
30
1.0E-03
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONS1U.0ME-E0R4 MARKET. APPLICATIONS O2R5°CUSES AS CRITICAL
COMPO2N0ENTS IN LIFE SUPPORT DEVICES2O5R°CSYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RES1E.0REV-E05S THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
0
2
4
6
8
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
V_SD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com