AO3400A Datasheet, PDF (1/4 Pages) Alpha Industries – N-Channel Enhancement Mode Field Effect Transistor

AO3400A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400A uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3400A is
Pb-free (meets ROHS & Sony 259 specifications).
FFeeaattuurreess
VV_DDSS(V(V))==3300VV
I_DI_D==51.17AA (V(V_GGSS==1100VV) )
RR_{DDSS(O(ONN) )}<<2164.5.5mmΩΩ((VV_GGSS==1100VV))
RR_{DDSS(O(ONN) )}<<3128mmΩΩ(V(V_GGSS==44.5.5VV))
R_DS(ON) < 48mΩ (V_GS = 2.5V)
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
5.7
4.7
25
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
70
100
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com